Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQP7N80C 功率场效应管, MOSFET, N沟道, 6.6 A, 800 V, 1.57 ohm, 10 V, 5 V9604 -
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Category: Medium high voltage MOS transistorDescription: SuperFET® 和 SuperFET® II N 通道 MOSFET，Fairchild Semiconductor Fairchild 使用超级结技术增加了 SuperFET® II 高电压功率 MOSFET 系列。 它提供最佳坚固主体二极管性能，适用于要求高功率密度、系统效率和可靠性的交流-直流开关模式电源 (SMPS) 应用，如服务器、电信、计算、工业电源、UPS/ESS、太阳能逆变器和照明应用。 利用先进的电荷平衡技术，设计人员可实现更高效经济的高性能解决方案，可占用更少板空间并提高可靠性。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。2829 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQP8N60C 功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 1 ohm, 10 V, 4 V5500 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPW17N80C3FKSA1 功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V9525 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STW48N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V 新6187 -
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Category: Medium high voltage MOS transistorDescription: N 通道 MDmesh DM2 系列，STMicroelectronics MDmesh DM2 MOSFET 提供低 RDS(on) 和改进的二极管反向恢复时间，可提高效率，此系列经优化可用于全桥相移 ZVS 拓扑。 高 dV/dt 能力，可提高系统可靠性 符合 AEC-Q101 ### MOSFET 晶体管，STMicroelectronics1596 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCB070N65S3 功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.062 ohm, 10 V, 4.5 V 新5567 -
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Category: Medium high voltage MOS transistorDescription: 晶体管, MOSFET, N沟道, 11 A, 900 V, 0.28 ohm, 15 V, 2.1 V5112 -
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Category: Medium high voltage MOS transistorDescription: VISHAY IRFBF20PBF 功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V7514 -
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Category: Medium high voltage MOS transistorDescription: FUJI ELECTRIC FMV20N60S1 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V2576 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQD1N80TM Power Field Effect Transistor, MOSFET, N-channel, 1 A, 800 V, 15.5 ohm, 10 V, 5 V5249 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB65R110CFDATMA1 功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V2572 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPW90R1K0C3FKSA1 功率场效应管, MOSFET, N沟道, 5.7 A, 900 V, 1 ohm, 10 V, 3 V6903 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCB20N60 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V2786 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPP17N80C3XKSA1 功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V5290 -
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Category: Medium high voltage MOS transistorDescription: INFINEON BSS225 L6327 功率场效应管, MOSFET, N沟道, 90 mA, 600 V, 28 ohm, 10 V, 1.9 V1725 -
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Category: Medium high voltage MOS transistorDescription: VISHAY IRFIB6N60APBF. 功率场效应管, MOSFET, N沟道, 5.5 A, 600 V, 750 mohm, 10 V, 4 V2977 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPA65R600E6XKSA1 功率场效应管, MOSFET, N沟道, 7.3 A, 700 V, 0.54 ohm, 10 V, 3 V7193 -
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Category: Medium high voltage MOS transistorDescription: INFINEON BSS126H6906XTSA1 功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, 2 V5697 -
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Category: Medium high voltage MOS transistorDescription: WOLFSPEED C2M0045170D 功率场效应管, MOSFET, N沟道, 72 A, 1.7 kV, 0.045 ohm, 20 V, 2.6 V 新3489 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPA65R190C7XKSA1 功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.168 ohm, 10 V, 3.5 V5309 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPA08N80C3XKSA1 功率场效应管, MOSFET, N沟道, 8 A, 800 V, 650 mohm, 10 V, 3 V9802 -
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Category: Medium high voltage MOS transistorDescription: SupreMOS® MOSFET，Fairchild Semiconductor Fairchild 推出了新一代 600V 超级结 MOSFET - SupreMOS®。 与 Fairchild 的 600V SuperFET™ MOSFET 相比，其低 RDS（接通）和总栅极电荷让品质因素 (FOM) 降低了 40%。 此外，SupreMOS 系列为相同的 RDS（接通）提供低栅极电荷，提供极佳的切换性能，切换和传导损耗降低 20%，从而获得更高的效率。 这些特征让电源符合用于台式 PC 的 ENERGY STAR® 80 PLUS 黄金分类和用于服务器的白金分类。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。5179 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPP65R190C7FKSA1 功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V1176 -
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Category: Medium high voltage MOS transistorDescription: VISHAY IRFU1N60APBF 场效应管, MOSFET, N沟道1007 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPD02N60C3BTMA1 功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V3707 -
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Category: Medium high voltage MOS transistorDescription: VISHAY IRFBF20SPBF. 功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V9564 -
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Category: Medium high voltage MOS transistorDescription: N沟道功率MOSFET的600 V ， 8.5 N-Channel Power MOSFET 600 V, 8.57074 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STW56N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 50 A, 600 V, 0.052 ohm, 10 V, 4 V 新6263
