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Model IRFBE30LPBF
Description 功率MOSFET Power MOSFET
Product QR code
Brand: Vishay Semiconductor
Packaging TO-262-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
10.39  yuan 10.39yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4560) Minimum order quantity(1)
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Technical parameters/drain source resistance:

3 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

125 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

800 V

 

Technical parameters/Continuous drain current (Ids):

4.10 A

 

Technical parameters/operating temperature (Max):

150 ℃

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-262-3

 

Dimensions/Length:

10.67 mm

 

Dimensions/Width:

4.83 mm

 

Dimensions/Height:

9.65 mm

 

Dimensions/Packaging:

TO-262-3

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFBE30L IRFBE30L International Rectifier 完全替代 TO-262
MOSFET N-CH 800V 4.1A TO-262
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