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Model SPD02N60C3BTMA1
Description INFINEON SPD02N60C3BTMA1 功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
Product QR code
Brand: Infineon
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.63  yuan 3.63yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3707) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

2.7 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

25 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

650 V

 

Technical parameters/Continuous drain current (Ids):

1.8A

 

Technical parameters/rise time:

3 ns

 

Technical parameters/Input capacitance (Ciss):

200pF @25V(Vds)

 

Technical parameters/rated power (Max):

25 W

 

Technical parameters/descent time:

12 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

25W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Not Recommended for New Designs

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Consumer Electronics, Industrial, Communications&Networks, Industrial, Communications& Networking, Consumer Electronics, power management

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

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