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Model IRFBF20SPBF
Description VISHAY IRFBF20SPBF. 功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.22  yuan 4.22yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9564) Minimum order quantity(1)
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Technical parameters/rated power:

54 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

8 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

54 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

900 V

 

Technical parameters/Continuous drain current (Ids):

1.70 A

 

Technical parameters/rise time:

21 ns

 

Technical parameters/descent time:

32 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263

 

Dimensions/Packaging:

TO-263

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFBF20S IRFBF20S Vishay Semiconductor 完全替代 3
MOSFET N-CH 900V 1.7A D2PAK
PDF
IRFBF20S IRFBF20S Infineon 完全替代 TO-263
MOSFET N-CH 900V 1.7A D2PAK
IRFBF20SPBF IRFBF20SPBF Vishay Semiconductor 功能相似 TO-263
Power Field-Effect Transistor, 1.7A I(D), 900V, 8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
PDF
IRFBF20SPBF IRFBF20SPBF International Rectifier 功能相似 TO-252-3
Power Field-Effect Transistor, 1.7A I(D), 900V, 8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
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