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Model IRFBF20SPBF
Description MOSFET N-CH 900V 1.7A D2PAK
Product QR code
Brand: International Rectifier
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3162) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 900 V

Technical parameters/rated current: 1.70 A

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 54.0 W

Technical parameters/drain source voltage (Vds): 900 V

Technical parameters/leakage source breakdown voltage: 900 V

Technical parameters/Continuous drain current (Ids): 1.70 A

Technical parameters/rise time: 21.0 ns

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFBF20S IRFBF20S Vishay Semiconductor 完全替代 3
MOSFET N-CH 900V 1.7A D2PAK
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IRFBF20S IRFBF20S Infineon 完全替代 TO-263
MOSFET N-CH 900V 1.7A D2PAK
IRFBF20SPBF IRFBF20SPBF Vishay Semiconductor 功能相似 TO-263
Power Field-Effect Transistor, 1.7A I(D), 900V, 8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
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IRFBF20SPBF IRFBF20SPBF International Rectifier 功能相似 TO-252-3
Power Field-Effect Transistor, 1.7A I(D), 900V, 8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
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