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Model BSS225 L6327

Description INFINEON BSS225 L6327 功率场效应管, MOSFET, N沟道, 90 mA, 600 V, 28 ohm, 10 V, 1.9 V

Brand: Infineon

Packaging SOT-89-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	600 V
Technical parameters/rated current:	90.0 mA
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	28 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1 W
Technical parameters/threshold voltage:	1.9 V
Technical parameters/Input capacitance:	131 pF
Technical parameters/gate charge:	5.80 nC
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/Continuous drain current (Ids):	90.0 mA
Technical parameters/rise time:	38 ns
Technical parameters/Input capacitance (Ciss):	131pF @25V(Vds)
Technical parameters/rated power (Max):	1 W
Technical parameters/descent time:	41 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-89-4
Dimensions/Packaging:	SOT-89-4
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17