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Model IPA65R190C7XKSA1
Description INFINEON IPA65R190C7XKSA1 功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.168 ohm, 10 V, 3.5 V
Product QR code
Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
10.26  yuan 10.26yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5309) Minimum order quantity(1)
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Technical parameters/rated power:

30 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.168 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

30 W

 

Technical parameters/threshold voltage:

3.5 V

 

Technical parameters/drain source voltage (Vds):

650 V

 

Technical parameters/Continuous drain current (Ids):

8A

 

Technical parameters/rise time:

11 ns

 

Technical parameters/Input capacitance (Ciss):

1150pF @400V(Vds)

 

Technical parameters/descent time:

9 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

30W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Industrial, Alternative Energy, Alternative Energy, Power Management, Communication&Networking, Power Management, Industrial, Communications& Networking

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

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