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Model IRFU1N60APBF
Description VISHAY IRFU1N60APBF 场效应管, MOSFET, N沟道
Product QR code
Brand: Vishay Semiconductor
Packaging TO-251
Delivery time
Packaging method
Standard packaging quantity 1
3.9  yuan 3.9yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1007) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

7 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

36 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Continuous drain current (Ids):

1.40 A

 

Technical parameters/Input capacitance (Ciss):

229pF @25V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

36 W

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-251

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

2.39 mm

 

Dimensions/Height:

6.22 mm

 

Dimensions/Packaging:

TO-251

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFU1N60A IRFU1N60A Vishay Semiconductor 完全替代
MOSFET N-CH 600V 1.4A I-PAK
PDF
IRFU1N60A IRFU1N60A Vishay Siliconix 完全替代 TO-251-3
MOSFET N-CH 600V 1.4A I-PAK
PDF

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