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Model STW33N60DM2
Description N 通道 MDmesh DM2 系列，STMicroelectronics MDmesh DM2 MOSFET 提供低 RDS(on) 和改进的二极管反向恢复时间，可提高效率，此系列经优化可用于全桥相移 ZVS 拓扑。 高 dV/dt 能力，可提高系统可靠性 符合 AEC-Q101 ### MOSFET 晶体管，STMicroelectronics
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Brand: ST Microelectronics
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
22.88  yuan 22.88yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1596) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.11 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

190 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Continuous drain current (Ids):

25A

 

Technical parameters/Input capacitance (Ciss):

1870pF @100V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

190W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Length:

15.75 mm

 

Dimensions/Width:

5.15 mm

 

Dimensions/Height:

20.15 mm

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

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