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Model FCH76N60N

Description SupreMOS® MOSFET，Fairchild Semiconductor Fairchild 推出了新一代 600V 超级结 MOSFET - SupreMOS®。与 Fairchild 的 600V SuperFET™ MOSFET 相比，其低 RDS（接通）和总栅极电荷让品质因素 (FOM) 降低了 40%。此外，SupreMOS 系列为相同的 RDS（接通）提供低栅极电荷，提供极佳的切换性能，切换和传导损耗降低 20%，从而获得更高的效率。这些特征让电源符合用于台式 PC 的 ENERGY STAR® 80 PLUS 黄金分类和用于服务器的白金分类。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。

Brand: Fairchild

Packaging TO-247-3

Delivery time

Packaging method Rail, Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(5179) Minimum order quantity(1)

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.028 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	543 W
Technical parameters/threshold voltage:	2 V
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/Continuous drain current (Ids):	76A
Technical parameters/rise time:	24 ns
Technical parameters/Input capacitance (Ciss):	12385pF @100V(Vds)
Technical parameters/descent time:	32 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	543 W
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-247-3
Dimensions/Length:	15.95 mm
Dimensions/Width:	5.03 mm
Dimensions/Height:	21 mm
Dimensions/Packaging:	TO-247-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Rail, Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15