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Model IRFBF20PBF

Description VISHAY IRFBF20PBF 功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V

Brand: Vishay Semiconductor

Packaging TO-220

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	8 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	54 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	900 V
Technical parameters/Continuous drain current (Ids):	1.70 A
Technical parameters/rise time:	21 ns
Technical parameters/Input capacitance (Ciss):	490pF @25V(Vds)
Technical parameters/descent time:	32 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	54 W
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220
Dimensions/Length:	10.41 mm
Dimensions/Width:	4.7 mm
Dimensions/Height:	9.01 mm
Dimensions/Packaging:	TO-220
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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