Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 8 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 54 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Continuous drain current (Ids): 1.70 A
Technical parameters/Input capacitance (Ciss): 490pF @25V(Vds)
Technical parameters/rated power (Max): 54 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 54 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.01 mm
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBF20
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 900V 1.7A TO-220AB
|
||
IRFBF20
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 900V 1.7A TO-220AB
|
|||
IRFBF20
|
International Rectifier | 完全替代 |
MOSFET N-CH 900V 1.7A TO-220AB
|
|||
IRFBF20PBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
IRFBF20PBF
|
International Rectifier | 功能相似 | TO-220 |
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
IRFBF20PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
IRFBF20PBF
|
LiteOn | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
IRFBF20PBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
STP3NK90Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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