Technical parameters/number of channels: 1
Technical parameters/dissipated power: 54W (Tc)
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Input capacitance (Ciss): 490pF @25V(Vds)
Technical parameters/dissipated power (Max): 54W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/width: 4.7 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBF20PBF
|
Vishay Semiconductor | 完全替代 | TO-220 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
|
||
IRFBF20PBF
|
International Rectifier | 完全替代 | TO-220 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
|
||
IRFBF20PBF
|
Vishay Siliconix | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
|
||
IRFBF20PBF
|
LiteOn | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
|
||
IRFBF20PBF
|
VISHAY | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review