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Model IRFBF20PBF
Description Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Brand: International Rectifier
Packaging TO-220
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6449) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 900 V

Technical parameters/rated current: 1.70 A

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 54.0 W

Technical parameters/drain source voltage (Vds): 900 V

Technical parameters/leakage source breakdown voltage: 900 V

Technical parameters/Continuous drain current (Ids): 1.70 A

Technical parameters/rise time: 21.0 ns

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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