Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 1.70 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 54.0 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900V (min)
Technical parameters/Continuous drain current (Ids): 1.70 A
Technical parameters/rise time: 21.0 ns
Encapsulation parameters/installation method: Through Hole
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBF20PBF
|
Vishay Semiconductor | 完全替代 | TO-220 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
|
||
IRFBF20PBF
|
International Rectifier | 完全替代 | TO-220 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
|
||
IRFBF20PBF
|
Vishay Siliconix | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
|
||
IRFBF20PBF
|
LiteOn | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
|
||
IRFBF20PBF
|
VISHAY | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
|
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