Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBF20
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 900V 1.7A TO-220AB
|
||
IRFBF20
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 900V 1.7A TO-220AB
|
|||
IRFBF20
|
International Rectifier | 完全替代 |
MOSFET N-CH 900V 1.7A TO-220AB
|
|||
IRFBF20PBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
IRFBF20PBF
|
International Rectifier | 功能相似 | TO-220 |
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
IRFBF20PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
IRFBF20PBF
|
LiteOn | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
IRFBF20PBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
STP3NK90Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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