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Technical parameters/rated voltage (DC):	600 V
Technical parameters/rated current:	7.50 A
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	1 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	147 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/Leakage source breakdown voltage:	600 V
Technical parameters/breakdown voltage of gate source:	±30.0 V
Technical parameters/Continuous drain current (Ids):	7.50 A
Technical parameters/rise time:	60.5 ns
Technical parameters/Input capacitance (Ciss):	1255pF @25V(Vds)
Technical parameters/rated power (Max):	147 W
Technical parameters/descent time:	64.5 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	147W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.67 mm
Dimensions/Width:	4.7 mm
Dimensions/Height:	16.3 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	STP55NF06L	ST Microelectronics	功能相似	TO-220-3	STMICROELECTRONICS STP55NF06L.. 场效应管, MOSFET, N沟道	PDF

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