Technical parameters/rated voltage (DC): | 60.0 V |
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Technical parameters/rated current: | 55.0 A |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.014 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 95 W |
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Technical parameters/threshold voltage: | 1.7 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60.0 V |
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Technical parameters/breakdown voltage of gate source: | ±16.0 V |
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Technical parameters/Continuous drain current (Ids): | 55.0 A |
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Technical parameters/rise time: | 100 ns |
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Technical parameters/Input capacitance (Ciss): | 1700pF @25V(Vds) |
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Technical parameters/rated power (Max): | 95 W |
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Technical parameters/descent time: | 20 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 95W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.4 mm |
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Dimensions/Width: | 4.6 mm |
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Dimensions/Height: | 9.15 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Ap Alternative material
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