Technical parameters/dissipated power: 2.5W (Ta), 5W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 846pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | SOT |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
||
FDS8878
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
||
FDS8878
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
||
IRF7807ZTRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
IRF7807ZTRPBF 编带
|
||
IRF7807ZTRPBF
|
Infineon | 功能相似 | SOIC-8 |
IRF7807ZTRPBF 编带
|
||
IRF7811AVTRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
|
||
IRF7811AVTRPBF
|
Infineon | 功能相似 | SOIC-8 |
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
|
||
SI4134DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 14A 8-SOIC
|
||
SI4410DYTRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI4410DYTRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI4892DY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.01Ω; ID 8.8A; SO-8; PD 1.6W; VGS +/-20V; -55d
|
||
SI4892DY-T1-E3
|
VISHAY | 功能相似 | SOP-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.01Ω; ID 8.8A; SO-8; PD 1.6W; VGS +/-20V; -55d
|
||
SI4892DY-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 30V 8.8A 8-SOIC
|
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