Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 10.0 A
Technical parameters/drain source resistance: 20 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: SI4410DY
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 10.0 A
Technical parameters/rise time: 7.70 ns
Technical parameters/Input capacitance (Ciss): 1585pF @15V(Vds)
Technical parameters/rated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Rochester | 功能相似 | SOT |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
||
FDS8878
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
||
FDS8878
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
||
SI4410DY
|
Fairchild | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 30V 10A 8Pin SOIC
|
||
SI4410DY
|
NXP | 类似代替 | SOIC |
Trans MOSFET N-CH 30V 10A 8Pin SOIC
|
||
SI4410DY
|
ON Semiconductor | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 30V 10A 8Pin SOIC
|
||
SI4410DY
|
Vishay Semiconductor | 类似代替 |
Trans MOSFET N-CH 30V 10A 8Pin SOIC
|
|||
SI4410DYPBF
|
Infineon | 类似代替 | SOIC-8 |
N 通道功率 MOSFET 8A 至 12A,Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备,采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。
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