Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 10A
Technical parameters/rise time: 7.7 ns
Technical parameters/Input capacitance (Ciss): 1585pF @15V(Vds)
Technical parameters/descent time: 44 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4410DY
|
Fairchild | 功能相似 | SOIC-8 |
单N沟道逻辑电平的PowerTrench MOSFET Single N-Channel Logic Level PowerTrench MOSFET
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SI4410DY
|
NXP | 功能相似 | SOIC |
单N沟道逻辑电平的PowerTrench MOSFET Single N-Channel Logic Level PowerTrench MOSFET
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SI4410DY
|
ON Semiconductor | 功能相似 | SOIC-8 |
单N沟道逻辑电平的PowerTrench MOSFET Single N-Channel Logic Level PowerTrench MOSFET
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SI4410DY
|
Vishay Semiconductor | 功能相似 |
单N沟道逻辑电平的PowerTrench MOSFET Single N-Channel Logic Level PowerTrench MOSFET
|
|||
SI4410DYTRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI4410DYTRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
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