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Model SI4410DY

Description 单N沟道逻辑电平的PowerTrench MOSFET Single N-Channel Logic Level PowerTrench MOSFET

Brand: Fairchild

Packaging SOIC-8

Delivery time

Packaging method Cut Tape (CT)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	30.0 V
Technical parameters/rated current:	10.0 A
Technical parameters/drain source resistance:	13.5 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	2.5W (Ta)
Technical parameters/Input capacitance:	1.35 nF
Technical parameters/gate charge:	22.0 nC
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Leakage source breakdown voltage:	30.0 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	10.0 A
Technical parameters/rise time:	20.0 ns
Technical parameters/Input capacitance (Ciss):	1350pF @15V(Vds)
Technical parameters/rated power (Max):	1 W
Technical parameters/dissipated power (Max):	2.5W (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Cut Tape (CT)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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