Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.01 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 1 V
Technical parameters/input capacitance: 1585 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/rise time: 7.7 ns
Technical parameters/Input capacitance (Ciss): 1585pF @15V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 44 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | SOT |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
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FDS8878
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ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
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FDS8878
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Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
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SI4410DY
|
Fairchild | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 30V 10A 8Pin SOIC
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SI4410DY
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NXP | 类似代替 | SOIC |
Trans MOSFET N-CH 30V 10A 8Pin SOIC
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SI4410DY
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ON Semiconductor | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 30V 10A 8Pin SOIC
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SI4410DY
|
Vishay Semiconductor | 类似代替 |
Trans MOSFET N-CH 30V 10A 8Pin SOIC
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SI4410DYPBF
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Infineon | 类似代替 | SOIC-8 |
N 通道功率 MOSFET 8A 至 12A，Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备，采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。
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