Encapsulation parameters/Encapsulation: SOT
External dimensions/packaging: SOT
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6614A
|
Fairchild | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 9.3A 8SOIC
|
||
|
|
Rochester | 功能相似 | SOT |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
||
FDS8878
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
||
FDS8878
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
||
|
|
Fairchild | 功能相似 | SOIC |
N沟道PowerTrench MOSFET的 N-Channel PowerTrench MOSFET
|
||
SI4410DYTRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI4410DYTRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
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