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Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 10.2A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Rochester | 功能相似 | SOT |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
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FDS8878
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
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FDS8878
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
|
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