Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.011 Ω
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 29 ns
Technical parameters/Input capacitance (Ciss): 897pF @15V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6614A
|
Fairchild | 类似代替 | SOIC-8 |
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FDS8878
|
ON Semiconductor | 功能相似 | SOIC-8 |
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FDS8878
|
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FAIRCHILD SEMICONDUCTOR FDS8878 晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
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N沟道PowerTrench MOSFET的 N-Channel PowerTrench MOSFET
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INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
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SI4410DYTRPBF
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International Rectifier | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
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