Technical parameters/dissipated power: 2.5W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1350pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4384DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET N-CH 30V 10A 8-SOIC
|
||
SI4410DYPBF
|
Infineon | 功能相似 | SOIC-8 |
N 通道功率 MOSFET 8A 至 12A，Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备，采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。
|
||
SI4410DYTRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
||
SI4410DYTRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON SI4410DYTRPBF 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review