Technical parameters/drain source resistance: 0.02 Ω
Technical parameters/dissipated power: 1.6 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4134DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 14A 8-SOIC
|
||
SI4134DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 MOSFET Transistor, N Channel, 14A, 30V, 11.5mohm, 10V, 1.8V
|
||
SI4134DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 MOSFET Transistor, N Channel, 14A, 30V, 11.5mohm, 10V, 1.8V
|
||
SI4134DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 MOSFET Transistor, N Channel, 14A, 30V, 11.5mohm, 10V, 1.8V
|
||
SI4892DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 8.8A 8-SOIC
|
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