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Model SI4134DY-T1-GE3

Description VISHAY SI4134DY-T1-GE3 晶体管, MOSFET, N沟道, 14 A, 30 V, 11.5 mohm, 10 V, 1.8 V

Brand: Vishay Semiconductor

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(1096) Minimum order quantity(1)

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.0115 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	5 W
Technical parameters/threshold voltage:	1.8 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Input capacitance (Ciss):	846pF @15V(Vds)
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2500 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Length:	5 mm
Dimensions/Width:	4 mm
Dimensions/Height:	1.5 mm
Dimensions/Packaging:	SOIC-8
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

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