Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 11.0 A |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.5 W |
|
Technical parameters/product series: | IRF7807Z |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 11.0 A |
|
Technical parameters/rise time: | 6.20 ns |
|
Technical parameters/Input capacitance (Ciss): | 770pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 2.5 W |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6690A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6690A 晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
|
||
FDS6690A
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6690A 晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
|
||
IRF7807ZPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7807ZPBF 晶体管, MOSFET, N沟道, 11 A, 30 V, 13.8 mohm, 10 V, 1.8 V
|
||
IRF7807ZTR
|
Infineon | 类似代替 | SOIC-8 |
SOIC N-CH 30V 11A
|
||
SI4134DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
N沟道30 V (D -S )的MOSFET N-Channel 30 V (D-S) MOSFET
|
||
SI4134DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
N沟道30 V (D -S )的MOSFET N-Channel 30 V (D-S) MOSFET
|
||
SI4134DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
N沟道30 V (D -S )的MOSFET N-Channel 30 V (D-S) MOSFET
|
||
SI4386DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC |
SI4386DY-T1-E3 编带
|
||
SI4386DY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
SI4386DY-T1-E3 编带
|
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