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Model SI4386DY-T1-E3
Description Trans MOSFET N-CH 30V 11A 8Pin SOIC N T/R
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.14  yuan 3.14yuan
5+:
$ 4.2377
25+:
$ 3.9238
50+:
$ 3.7040
100+:
$ 3.6099
500+:
$ 3.5471
2500+:
$ 3.4686
5000+:
$ 3.4372
10000+:
$ 3.3901
Quantity
5+
25+
50+
100+
500+
Price
$4.2377
$3.9238
$3.7040
$3.6099
$3.5471
Price $ 4.2377 $ 3.9238 $ 3.7040 $ 3.6099 $ 3.5471
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7422) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.0058 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 3.1 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 16.0 A

Technical parameters/rise time: 9 ns

Technical parameters/descent time: 10 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1470 mW

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/height: 1.55 mm

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4386DY-T1-GE3 SI4386DY-T1-GE3 VISHAY 完全替代 SO-8
MOSFET N-CH 30V 11A 8-SOIC
PDF
SI4386DY-T1-GE3 SI4386DY-T1-GE3 Vishay Semiconductor 完全替代 SOIC
MOSFET N-CH 30V 11A 8-SOIC
PDF

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