Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 11.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5W (Ta)
Technical parameters/product series: IRF7807Z
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 11.0 A
Technical parameters/rise time: 6.2 ns
Technical parameters/Input capacitance (Ciss): 770pF @15V(Vds)
Technical parameters/descent time: 3.1 ns
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7807ZTRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
IRF7807ZTRPBF 编带
|
||
IRF7807ZTRPBF
|
Infineon | 类似代替 | SOIC-8 |
IRF7807ZTRPBF 编带
|
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