Technical parameters/rated power: 2.5 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 18.2 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 1.8 V
Technical parameters/input capacitance: 770 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 11A
Technical parameters/rise time: 6.2 ns
Technical parameters/Input capacitance (Ciss): 770pF @15V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 3.1 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6690A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6690A 晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
|
||
FDS6690A
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6690A 晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
|
||
IRF7807ZPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7807ZPBF 晶体管, MOSFET, N沟道, 11 A, 30 V, 13.8 mohm, 10 V, 1.8 V
|
||
IRF7807ZTR
|
Infineon | 类似代替 | SOIC-8 |
SOIC N-CH 30V 11A
|
||
SI4134DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
N沟道30 V （D -S ）的MOSFET N-Channel 30 V (D-S) MOSFET
|
||
SI4134DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
N沟道30 V （D -S ）的MOSFET N-Channel 30 V (D-S) MOSFET
|
||
SI4134DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
N沟道30 V （D -S ）的MOSFET N-Channel 30 V (D-S) MOSFET
|
||
SI4386DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC |
SI4386DY-T1-E3 编带
|
||
SI4386DY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
SI4386DY-T1-E3 编带
|
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