Technical parameters/drain source resistance: 20.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.10 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 8.80 A
Technical parameters/rise time: 11 ns
Technical parameters/rated power (Max): 1.6 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP-8
External dimensions/packaging: SOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4134DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 14A 8-SOIC
|
||
SI4134DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 MOSFET Transistor, N Channel, 14A, 30V, 11.5mohm, 10V, 1.8V
|
||
SI4134DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 MOSFET Transistor, N Channel, 14A, 30V, 11.5mohm, 10V, 1.8V
|
||
SI4134DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 MOSFET Transistor, N Channel, 14A, 30V, 11.5mohm, 10V, 1.8V
|
||
SI4892DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 8.8A 8-SOIC
|
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