Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4134DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 MOSFET Transistor, N Channel, 14A, 30V, 11.5mohm, 10V, 1.8V
|
||
SI4134DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 MOSFET Transistor, N Channel, 14A, 30V, 11.5mohm, 10V, 1.8V
|
||
SI4134DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 MOSFET Transistor, N Channel, 14A, 30V, 11.5mohm, 10V, 1.8V
|
||
SI4892DY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.01Ω; ID 8.8A; SO-8; PD 1.6W; VGS +/-20V; -55d
|
||
SI4892DY-T1-E3
|
VISHAY | 功能相似 | SOP-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.01Ω; ID 8.8A; SO-8; PD 1.6W; VGS +/-20V; -55d
|
||
SI4892DY-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 30V 8.8A 8-SOIC
|
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