Technical parameters/drain source resistance: 11.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.6 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 16.0 A
Technical parameters/rise time: 12 ns
Technical parameters/rated power (Max): 1.6 W
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6690A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6690A 晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
|
||
FDS6690A
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6690A 晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
|
||
IRF7466PBF
|
Infineon | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 30V 11A 8Pin SOIC
|
||
IRF7807ZTR
|
Infineon | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 30V 11A 8Pin SOIC T/R
|
||
SI4860DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4860DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 11A 8-SOIC
|
|||
SI4888DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
|
||
SI4888DY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
|
||
SI4888DY-T1-E3
|
VISHAY | 类似代替 | SOP |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
|
||
SI4888DY-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4888DY-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 30V 11A 8-SOIC
|
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