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Model SI4888DY-T1-E3
Description MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
Product QR code
Brand: Vishay Semiconductor
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
9.88  yuan 9.88yuan
10+:
$ 11.8596
100+:
$ 11.2666
500+:
$ 10.8713
1000+:
$ 10.8515
2000+:
$ 10.7725
5000+:
$ 10.6736
7500+:
$ 10.5946
10000+:
$ 10.5550
Quantity
10+
100+
500+
1000+
2000+
Price
$11.8596
$11.2666
$10.8713
$10.8515
$10.7725
Price $ 11.8596 $ 11.2666 $ 10.8713 $ 10.8515 $ 10.7725
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2420) Minimum order quantity(10)
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Technical parameters/drain source resistance: 0.01 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.6 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 16.0 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 5 mm

External dimensions/height: 1.55 mm

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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