Technical parameters/dissipated power: | 1.6W (Ta) |
|
Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/dissipated power (Max): | 1.6W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SO-8 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 1.75 mm |
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Dimensions/Packaging: | SO-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6690A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6690A 晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
|
||
FDS6690A
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6690A 晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
|
||
IRF7466PBF
|
Infineon | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 30V 11A 8Pin SOIC
|
||
IRF7807ZTR
|
Infineon | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 30V 11A 8Pin SOIC T/R
|
||
SI4860DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4860DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 11A 8-SOIC
|
|||
SI4888DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
|
||
SI4888DY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
|
||
SI4888DY-T1-E3
|
VISHAY | 类似代替 | SOP |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
|
||
SI4888DY-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4888DY-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 30V 11A 8-SOIC
|
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