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Model SI4860DY-T1-GE3
Description MOSFET N-CH 30V 11A 8-SOIC
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Brand: Vishay Semiconductor
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5196) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/drain source voltage (Vds): 30.0 V

Technical parameters/Continuous drain current (Ids): 11.0 A

Package parameters/number of pins: 8

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4860DY-T1-E3 SI4860DY-T1-E3 Vishay Siliconix 类似代替 SO-8
MOSFET N-CH 30V 11A 8-SOIC
PDF
SI4860DY-T1-E3 SI4860DY-T1-E3 Vishay Semiconductor 类似代替 SOIC
MOSFET N-CH 30V 11A 8-SOIC
PDF
SI4860DY-T1-E3 SI4860DY-T1-E3 VISHAY 类似代替 SOIC-8
MOSFET N-CH 30V 11A 8-SOIC
PDF
SI4860DY-T1-GE3 SI4860DY-T1-GE3 Vishay Siliconix 类似代替 SOIC-8
MOSFET N-CH 30V 11A 8-SOIC
PDF
SI4860DY-T1-GE3 SI4860DY-T1-GE3 Vishay Semiconductor 类似代替
MOSFET N-CH 30V 11A 8-SOIC
PDF
SI4888DY-T1-E3 SI4888DY-T1-E3 Vishay Semiconductor 功能相似 SO-8
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
PDF
SI4888DY-T1-E3 SI4888DY-T1-E3 Vishay Siliconix 功能相似 SO-8
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
PDF
SI4888DY-T1-E3 SI4888DY-T1-E3 VISHAY 功能相似 SOP
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
PDF

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