Technical parameters/dissipated power: 1.6W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4860DY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4860DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4860DY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4860DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4860DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 11A 8-SOIC
|
|||
SI4888DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SO-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
|
||
SI4888DY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
|
||
SI4888DY-T1-E3
|
VISHAY | 功能相似 | SOP |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
|
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