Technical parameters/drain source resistance: 0.01 Ω
Technical parameters/dissipated power: 1.6 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4860DY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4860DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4860DY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4888DY
|
Visay | 类似代替 |
MOSFET 30V 16A 3.5W
|
|||
SI4888DY
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET 30V 16A 3.5W
|
||
SI4888DY
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET 30V 16A 3.5W
|
||
SI4888DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 30V 11A 8-SOIC
|
||
SI4888DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 11A 8-SOIC
|
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