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Model SI4888DY-T1-GE3

Description Trans MOSFET N-CH 30V 11A 8Pin SOIC N T/R

Brand: Vishay Semiconductor

Packaging

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Other/Packaging Methods: Tape & Reel (TR)

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
SI4860DY-T1-E3	Vishay Siliconix	完全替代	SO-8	MOSFET N-CH 30V 11A 8-SOIC	PDF
SI4860DY-T1-E3	Vishay Semiconductor	完全替代	SOIC	MOSFET N-CH 30V 11A 8-SOIC	PDF
SI4860DY-T1-E3	VISHAY	完全替代	SOIC-8	MOSFET N-CH 30V 11A 8-SOIC	PDF
SI4860DY-T1-GE3	Vishay Siliconix	类似代替	SOIC-8	MOSFET N-CH 30V 11A 8-SOIC	PDF
SI4860DY-T1-GE3	Vishay Semiconductor	类似代替		MOSFET N-CH 30V 11A 8-SOIC	PDF
SI4888DY-T1-E3	Vishay Semiconductor	类似代替	SO-8	MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55	PDF
SI4888DY-T1-E3	Vishay Siliconix	类似代替	SO-8	MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55	PDF
SI4888DY-T1-E3	VISHAY	类似代替	SOP	MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55	PDF

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Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
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