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Model SI4888DY
Description NChannel reduced Qg, fast switching MOSFET N-Channel reduced Qg, fast switching MOSFET
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1821) Minimum order quantity(1)
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Technical parameters/drain source resistance: 10.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 3.50 W

Technical parameters/Continuous drain current (Ids): 11.0 A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4888DY-T1-E3 SI4888DY-T1-E3 Vishay Semiconductor 类似代替 SO-8
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
PDF
SI4888DY-T1-E3 SI4888DY-T1-E3 Vishay Siliconix 类似代替 SO-8
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
PDF
SI4888DY-T1-E3 SI4888DY-T1-E3 VISHAY 类似代替 SOP
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
PDF
SI6913DQ-T1-E3 SI6913DQ-T1-E3 Vishay Siliconix 类似代替 TSSOP-8
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
PDF
SI6913DQ-T1-E3 SI6913DQ-T1-E3 Vishay Intertechnology 类似代替 TSSOP-8
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
SI6913DQ-T1-E3 SI6913DQ-T1-E3 Vishay Semiconductor 类似代替 SOP
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
PDF

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