Technical parameters/dissipated power: 830 mW
Technical parameters/rise time: 80 ns
Technical parameters/descent time: 80 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 830 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP
External dimensions/height: 1 mm
External dimensions/packaging: SOP
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6966DQ-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET 2N-CH 20V 4A 8TSSOP
|
|||
SI6981DQ-T1-GE3
|
VISHAY | 类似代替 | TSSOP-8 |
MOSFET P-CH D-S 20V 8-TSSOP
|
||
SI6981DQ-T1-GE3
|
Vishay Siliconix | 类似代替 | TSSOP-8 |
MOSFET P-CH D-S 20V 8-TSSOP
|
||
|
|
Vishay Semiconductor | 类似代替 | TSSOP |
MOSFET P-CH D-S 20V 8-TSSOP
|
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