Technical parameters/polarity: Dual P-Channel
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): -4.80 A
Technical parameters/rated power (Max): 830 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/packaging: TSSOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6913DQ-T1-E3
|
Vishay Siliconix | 类似代替 | TSSOP-8 |
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
|
||
SI6913DQ-T1-E3
|
Vishay Intertechnology | 类似代替 | TSSOP-8 |
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
|
||
SI6913DQ-T1-E3
|
Vishay Semiconductor | 类似代替 | SOP |
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
|
||
SI9407BDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
Trans MOSFET P-CH 60V 3.2A 8Pin SOIC N T/R
|
||
SI9407BDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO-8 |
Trans MOSFET P-CH 60V 3.2A 8Pin SOIC N T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review