Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/rated power (Max): 830 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/packaging: TSSOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6966DQ-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET 2N-CH 20V 4A 8TSSOP
|
|||
SI6981DQ-T1-GE3
|
VISHAY | 类似代替 | TSSOP-8 |
MOSFET P-CH D-S 20V 8-TSSOP
|
||
SI6981DQ-T1-GE3
|
Vishay Siliconix | 类似代替 | TSSOP-8 |
MOSFET P-CH D-S 20V 8-TSSOP
|
||
|
|
Vishay Semiconductor | 类似代替 | TSSOP |
MOSFET P-CH D-S 20V 8-TSSOP
|
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