Technical parameters/drain source resistance: 0.026 Ω
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 830 mW
Technical parameters/drain source voltage (Vds): -20.0 V
Technical parameters/Continuous drain current (Ids): -4.80 A
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP
External dimensions/packaging: TSSOP
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6913DQ-T1-E3
|
Vishay Siliconix | 类似代替 | TSSOP-8 |
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
|
||
SI6913DQ-T1-E3
|
Vishay Intertechnology | 类似代替 | TSSOP-8 |
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
|
||
SI6913DQ-T1-E3
|
Vishay Semiconductor | 类似代替 | SOP |
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
|
||
SI9407BDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
Trans MOSFET P-CH 60V 3.2A 8Pin SOIC N T/R
|
||
SI9407BDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO-8 |
Trans MOSFET P-CH 60V 3.2A 8Pin SOIC N T/R
|
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