Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.026 Ω
Technical parameters/dissipated power: 830 mW
Technical parameters/rise time: 55 ns
Technical parameters/descent time: 52 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1140 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/packaging: TSSOP-8
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6913DQ-T1-E3
|
Vishay Siliconix | 类似代替 | TSSOP-8 |
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
|
||
SI6913DQ-T1-E3
|
Vishay Intertechnology | 类似代替 | TSSOP-8 |
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
|
||
SI6913DQ-T1-E3
|
Vishay Semiconductor | 类似代替 | SOP |
MOSFET P-CH DUAL 12V 4.9A 8TSSOP
|
||
SI9407BDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
Trans MOSFET P-CH 60V 3.2A 8Pin SOIC N T/R
|
||
SI9407BDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO-8 |
Trans MOSFET P-CH 60V 3.2A 8Pin SOIC N T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review