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Model SI2306BDS-T1-E3

Description VISHAY SI2306BDS-T1-E3 Transistor, MOSFET, N-channel, 4 A, 30 V, 0.038 ohm, 10 V, 3 V

Brand: Vishay Semiconductor

Packaging TO-236

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

10+:

$ 0.9815

50+:

$ 0.9306

100+:

$ 0.8942

300+:

$ 0.8724

500+:

$ 0.8506

1000+:

$ 0.8288

2500+:

$ 0.7961

5000+:

$ 0.7888

Price	$ 0.9815	$ 0.9306	$ 0.8942	$ 0.8724	$ 0.8506
Start batch production	10+	50+	100+	300+	500+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(3338) Minimum order quantity(10)

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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.038 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.25 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30 V

Technical parameters/Continuous drain current (Ids): 3.16 A

Technical parameters/rise time: 12 ns

Technical parameters/thermal resistance: 100℃/W (RθJA)

Technical parameters/Input capacitance (Ciss): 305pF @15V(Vds)

Technical parameters/descent time: 10 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 0.75 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-236

External dimensions/length: 3.04 mm

External dimensions/width: 1.4 mm

External dimensions/height: 1.02 mm

External dimensions/packaging: TO-236

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Power Management, Industrial

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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