Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.049 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.1 W |
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Technical parameters/threshold voltage: | 2.2 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 3.60 A |
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Technical parameters/rise time: | 12 ns |
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Technical parameters/Input capacitance (Ciss): | 235pF @15V(Vds) |
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Technical parameters/rated power (Max): | 1.7 W |
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Technical parameters/descent time: | 5 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.7 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 3.04 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1.02 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 3000 |
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Other/Manufacturing Applications: | Industrial, power management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMN3115UDMQ-7
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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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IFA | 功能相似 |
INFINEON IRLML0030TRPBF 晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
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IRLML0030TRPBF
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International Rectifier | 功能相似 | SOT-23-3 |
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MGSF1N03LT1G
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ON Semiconductor | 功能相似 | SOT-23-3 |
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|
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SI2306BDS-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
|
||
SI2306BDS-T1-E3
|
Vishay Intertechnology | 类似代替 | SOT-23-3 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
|
||
SI2306BDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
|
||
SI2306BDS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
|
||
TN0201K-T1-E3
|
Vishay Semiconductor | 功能相似 | SOT-23 |
VISHAY TN0201K-T1-E3 晶体管, MOSFET, N沟道, 420 mA, 20 V, 800 mohm, 4.5 V, 2 V
|
||
TN0201K-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY TN0201K-T1-E3 晶体管, MOSFET, N沟道, 420 mA, 20 V, 800 mohm, 4.5 V, 2 V
|
||
TN0201K-T1-E3
|
Vishay Intertechnology | 功能相似 | SOT-23-3 |
VISHAY TN0201K-T1-E3 晶体管, MOSFET, N沟道, 420 mA, 20 V, 800 mohm, 4.5 V, 2 V
|
||
UT2306G-AE2-R
|
UTC | 功能相似 |
N-CHANNEL ENHANCEMENT MODE
|
|||
UT2306G-AE3-R
|
UTC | 功能相似 | SOT-23 |
MOS场效应管 UT2306G SOT-23 N沟道,30V,3.5A,65mΩ@10V
|
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